The determination of interface states and series resistance profile of Al/polymer/PEDOT-PSS/ITO heterojunction diode by I-V and C-V methods

Şahingöz R., Kanbur H., Voigt M., SOYKAN C.

Synthetic Metals, cilt.158, sa.17-18, ss.727-731, 2008 (SCI-Expanded) identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 158 Sayı: 17-18
  • Basım Tarihi: 2008
  • Doi Numarası: 10.1016/j.synthmet.2008.04.023
  • Dergi Adı: Synthetic Metals
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.727-731
  • Anahtar Kelimeler: Frequency dependent, Heterojunction diode, Organic nanometric thin film, Poly[2-(2-naphtylamino)-2-oxo-ethyl methacrylate], Polymer, Series resistance
  • Uşak Üniversitesi Adresli: Evet

Özet

The forward and reverse bias capacitance-voltage (C-V) and conductance-voltage (G / w - V) characteristics of Al/polymer/PEDOT-PSS/ITO heterojunction diodes have been investigated in the frequency range of 10 kHz to 5 MHz at room temperature. The obtained C-V and G / w - V characteristics of these diodes at various gate biases show fairly large frequency dispersion especially at low frequencies and forward bias due to surface states Nss in equilibrium with the polymer semiconductor and series resistance Rs. These observations indicate that at low frequencies, the charges at interface states can easily follow an ac signal and yield an excess capacitance and conductance. In addition, the forward and reverse bias current-voltage (I-V) characteristics of Al/polymer/PEDOT-PSS/ITO heterojunction diode were measured at room temperature. The main diode parameters such as barrier height ΦB0, ideality factor n and average series resistance Rs obtained from the forward bias ln I-V characteristics were found as 0.53 eV, 4.79 and 195 Ω, respectively. Experimental results show that both Nss and Rs values should be taken into account in determining frequency and voltage-dependent I-V, C-V and G / w - V characteristics. © 2008 Elsevier B.V. All rights reserved.