The dependence of electrical properties of Al/NphAOEMA/PEDOT-PSS/ITO structures on temperature

ŞAHİNGÖZ R., KANBUR ÇAVUŞ H., ALTINDAL Ş., SOYKAN C., DÖKME İ.

Optoelectronics and Advanced Materials, Rapid Communications, cilt.4, sa.12, ss.2132-2135, 2010 (SCI-Expanded) identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 4 Sayı: 12
  • Basım Tarihi: 2010
  • Dergi Adı: Optoelectronics and Advanced Materials, Rapid Communications
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.2132-2135
  • Anahtar Kelimeler: Interface states, Polymer, Series resistance, Temperature dependent
  • Uşak Üniversitesi Adresli: Evet

Özet

The capacitance-voltage-temperature (C-V-T) and conductance-voltage-temperature (G/w-V-T) characteristics of the Al/NphAOEMA/PEDOT-PSS/ITO heterojunction structures have been investigated by taking into account the effect of the series resistance (Rs) and interface states (Nss) in the temperature range of 120-400 K. The values of Rs and Nss were calculated by using Nicollian and Goetzberger and Hill-Coleman methods, respectively, and both the values of Rs and Nss decrease with increasing temperature. Experimental C-V-T and G/w-V-T characteristics confirm that the Nss and Rs of the diode are important parameters that strongly influence the electric parameters of Al/NphAOEMA/PEDOT-PSS/ITO heterojunction structures. While the Rs are significant only in the downward curvature of the forward bias C-V characteristics and accumulation region, Nss are significant in both the inversion and depletion region. Such behavior of Rs may be attributed to particular distribution of Nss, restructure and reordering surface atoms with temperature and excess capacitance resulting from the Nss in equilibrium with the semiconductor which can follow the ac signal.